IPG20N06S2L65ATMA1 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IPG20N06S2L65ATMA1

Description:

MOSFET 2N-CH 55V 20A TDSON-8-4

Stock:

20439

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.2

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Parameters

Current at 25 ° C - continuous drain (Id)

20A

Drain source voltage (Vdss)

55V

FET Type

2 N-channels(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

12nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

410pF @ 25V

On resistance (maximum) for different Ids and Vgs

65 mΩ @ 15A,10V

Power - maximum

43W

Vgs (th) (maximum) for different Ids

2V @ 14µA

packing

TR,CT,bulk

series

Automotive, AEC-Q101, OptiMOS™

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

8-PowerVDFN

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载IPG20N06S2L65ATMA1.pdf

IPG20N06S2L65ATMA1（FET, MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory20439,Price reference "real-time change" China/Hongkong。 IPG20N06S2L65ATMA1 package/specs, Download IPG20N06S2L65ATMA1、Datasheet。